Radiation microscope for SEE testing using GeV ions.

Doyle, Barney Lee ; Knapp, James Arthur ; Rossi, Paolo ; Hattar, Khalid M. ; Vizkelethy, Gyorgy ; Brice, David Kenneth ; Branson, Janelle V.

关键词: CYCLOTRONS;    EFFICIENCY;    FLUORESCENCE;    FOCUSING;    HARD COMPONENT;    ION BEAMS;    MANUFACTURING;    MICROSCOPES;    MICROSCOPY;    NUCLEAR WEAPONS;    PHOTON EMISSION;    PHOTONS;    RADIATION EFFECTS;    RADIATIONS;    TESTING;    THICKNESS Radiation effects-Measurement.;    Hardness-Testing.;    Microscope and microscopy.;   

DOI  :  10.2172/974880
RP-ID  :  SAND2009-6339
PID  :  OSTI ID: 974880
Others  :  TRN: US1002598

美国|英语

来源: SciTech Connect

【 摘 要 】

Radiation Effects Microscopy is an extremely useful technique in failure analysis of electronic parts used in radiation environment. It also provides much needed support for development of radiation hard components used in spacecraft and nuclear weapons. As the IC manufacturing technology progresses, more and more overlayers are used; therefore, the sensitive region of the part is getting farther and farther from the surface. The thickness of these overlayers is so large today that the traditional microbeams, which are used for REM are unable to reach the sensitive regions. As a result, higher ion beam energies have to be used (> GeV), which are available only at cyclotrons. Since it is extremely complicated to focus these GeV ion beams, a new method has to be developed to perform REM at cyclotrons. We developed a new technique, Ion Photon Emission Microscopy, where instead of focusing the ion beam we use secondary photons emitted from a fluorescence layer on top of the devices being tested to determine the position of the ion hit. By recording this position information in coincidence with an SEE signal we will be able to indentify radiation sensitive regions of modern electronic parts, which will increase the efficiency of radiation hard circuits.