Modelling off Hugoniot Loading Using Ramp Compression in Single Crystal Copper

Hawreliak, J ; Remington, B A ; Lorenzana, H ; Bringa, E ; Wark, J

关键词: ATOMS;    COMPRESSION;    COPPER;    ENTROPY;    LOADING RATE;    MONOCRYSTALS;    THERMODYNAMICS;   

DOI  :  10.2172/1018789
RP-ID  :  LLNL-TR-466111
PID  :  OSTI ID: 1018789
Others  :  TRN: US201114%%485

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

The application of a ramp load to a sample is a method by which the thermodynamic variables of the high pressure state can be controlled. The faster the loading rate, the higher the entropy and higher the temperature. This paper describes moleculer dynamics (MD) simulations with 25 million atoms which investigate ramp loading of single crystal copper. The simulations followed the propagation of a 300ps ramp load to 3Mbar along the [100] direction copper. The simulations were long enough to allow the wave front to steepen into a shock, at which point the simulated copper sample shock melted.