Nanotexturing of surfaces to reduce melting point.

Garcia, Ernest J. ; Zubia, David (University of Texas at El Paso El Paso, TX) ; Mireles, Jose (Universidad Aut%C3%94onoma de Ciudad Ju%C3%94arez Ciudad Ju%C3%94arez, Mexico) ; Marquez, Noel (University of Texas at El Paso El Paso, TX) ; Quinones, Stella (Univ

关键词: ANNEALING;    BONDING;    CHEMICAL VAPOR DEPOSITION;    DESIGN;    ETCHING;    HEATING;    HYDROGEN;    MELTING;    MELTING POINTS;    MOLECULAR BEAM EPITAXY;    OXYGEN;    PACKAGING;    SILICON;    TRANSFORMATIONS;   

DOI  :  10.2172/1034878
RP-ID  :  SAND2012-0132
PID  :  OSTI ID: 1034878
Others  :  TRN: US201205%%17

美国|英语

来源: SciTech Connect

【 摘 要 】

This investigation examined the use of nano-patterned structures on Silicon-on-Insulator (SOI) material to reduce the bulk material melting point (1414 C). It has been found that sharp-tipped and other similar structures have a propensity to move to the lower energy states of spherical structures and as a result exhibit lower melting points than the bulk material. Such a reduction of the melting point would offer a number of interesting opportunities for bonding in microsystems packaging applications. Nano patterning process capabilities were developed to create the required structures for the investigation. One of the technical challenges of the project was understanding and creating the specialized conditions required to observe the melting and reshaping phenomena. Through systematic experimentation and review of the literature these conditions were determined and used to conduct phase change experiments. Melting temperatures as low as 1030 C were observed.