SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

Windl, Wolfgang¹  Blue, Thomas¹ 

[1] The Ohio State Univ., Columbus, OH (United States)

关键词: SILICON CARBIDES;    MOLTEN SALTS;    SCHOTTKY BARRIER DIODES;    ALPHA DETECTION;    SPENT FUELS;    ABUNDANCE;    TEMPERATURE RANGE 0400-1000 K;    ACTINIDES;    CARRIER MOBILITY;    CRYSTAL DEFECTS;    ELECTROLYTES;    MIXTURES;    MONITORS;    ELECTRONIC STRUCTURE;    PHYSICAL RADIATION EFFECTS;    DESIGN;    TIME DEPENDENCE;    OPERATION;    PERFORMANCE;    SIMULATION;    PYROCHEMICAL REPROCESSING;    SEMICONDUCTOR DETECTORS;   

DOI  :  10.2172/1064000
RP-ID  :  DOE/NEUP--09-842
PID  :  OSTI ID: 1064000
Others  :  TRN: US1600672

美国|英语

来源: SciTech Connect

【 摘 要 】

In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 ?��C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling to understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.