In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance

Hacke, P. ; Terwilliger, K. ; Kurtz, S.

关键词: PV;    DEGRADATION;    CRYSTALLINE SILICON;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/1090973
RP-ID  :  NREL/TP-5200-60044
PID  :  OSTI ID: 1090973

美国|英语

来源: SciTech Connect

【 摘 要 】

The extent of potential-induced degradation of crystalline silicon modules in an environmental chamber is estimated using in-situ dark I-V measurements and applying superposition analysis. The dark I-V curves are shown to correctly give the module power performance at 200, 600 and 1,000 W/m2 irradiance conditions, as verified with a solar simulator. The onset of degradation measured in low light in relation to that under one sun irradiance can be clearly seen in the module design examined; the time to 5% relative degradation measured in low light (200 W/m2) was 28% less than that of full sun (1,000 W/m2 irradiance). The power of modules undergoing potential-induced degradation can therefore be characterized in the chamber, facilitating statistical analyses and lifetime forecasting.