Final Technical Report

Chen, Cheng-Po¹  Andarawis, Emad¹  Shaddock, David¹  Yin, Liang² 

[1] GE Global Research, Niskayuna, New York (United States);GE Global Research,

关键词: high temperature electronics;    wired telemetry;    silicon carbide electronics;   

DOI  :  10.2172/1274409
RP-ID  :  DOE-GEGR-02755-1
PID  :  OSTI ID: 1274409

学科分类：再生能源与代替技术

美国|英语

来源: SciTech Connect

【 摘 要 】

The development and demonstration in this digital telemetry project has brought SiC-based high temperature electronics to a new level of complexity and integration with the active electronic devices and the packaging materials operating at 300?��C for greater than 2000 hours. Our highest level of integration is a 6x6mm die with 474 transistors with the most complex functionality to date. Advances were made in the area of device modeling and fabrication, circuit simulation and design, device testing, and packaging. The technologies developed here would help enable sensor systems in enhanced geothermal systems, as well as other applications with high temperature requirements.