Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

Xi, Xiaoxing¹ 

[1] Temple University

关键词: oxide thin films;    epitaxial strain;    atomic layer-by-layer growth;    oxide interface;   

DOI  :  10.2172/1114213
RP-ID  :  DOE-PSU-45907-F
PID  :  OSTI ID: 1114213

学科分类：纳米科学和纳米技术

美国|英语

来源: SciTech Connect

【 摘 要 】

In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.