Silicon Damage Response Function Derivation and Verification: Assessment of Impact on ASTM Standard E722

Depriest, Kendall¹ 

[1]Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

关键词: RESPONSE FUNCTIONS;    SILICON;    MEV RANGE 01-10;    STANDARDS;    COMPARATIVE EVALUATIONS;    VERIFICATION;    PROGRAMMING;    PHYSICAL RADIATION EFFECTS;    ERRORS;    CORRECTIONS;    M C;   

DOI  :  10.2172/1259547
RP-ID  :  SAND--2016-5511
PID  :  OSTI ID: 1259547
Others  :  Other: 641749
Others  :  TRN: US1601525

美国|英语

来源: SciTech Connect

【 摘 要 】

Unsuccessful attempts by members of the radiation effects community to independently derive the Norgett-Robinson-Torrens (NRT) damage energy factors for silicon in ASTM standard E722-14 led to an investigation of the software coding and data that produced those damage energy factors. The ad hoc collaboration to discover the reason for lack of agreement revealed a coding error and resulted in a report documenting the methodology to produce the response function for the standard. The recommended changes in the NRT damage energy factors for silicon are shown to have significant impact for a narrow energy region of the 1-MeV(Si) equivalent fluence response function. However, when evaluating integral metrics over all neutrons energies in various spectra important to the SNL electronics testing community, the change in the response results in a small decrease in the total 1- MeV(Si) equivalent fluence of ~0.6% compared to the E722-14 response. Response functions based on the newly recommended NRT damage energy factors have been produced and are available for users of both the NuGET and MCNP codes.