Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

JOURNAL OF ALLOYS AND COMPOUNDS

卷:829

Article

Ren, Bing^1,2  Liao, Meiyong³  Sumiya, Masatomo³  Li, Jian¹  Wang, Lei¹  Liu, Xinke¹  Koide, Yasuo⁴  Sang, Liwen^2,4 

[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Key Lab Special Funct Mat, 3688 Nanhai Ave, Shenzhen 518060, Peoples R China

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, Res Ctr Funct Mat, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan

[4] Natl Inst Mat Sci, Amano Koide Collaborat Res Lab, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

关键词: alpha-BN/h-BN;    AlGaN/GaN;    HEMTs;   

DOI  :  10.1016/j.jallcom.2020.154542

来源: Elsevier

【 摘 要 】

The authors proposed a novel alpha-BN/h-BN dual-layered dielectric to fabricate AlGaN/GaN metal-insulatorsemiconductor high electron mobility transistor (MIS-HEMT). In contrast to the Schottky-HEMT, the gate leakage current was suppressed by more than 6 orders of magnitude at forward voltage of 5V. An atomically smooth interface and low interface state density were obtained, benefiting from the quasizero lattice mismatch and the passivation effect of alpha-BN on AlGaN. Electrical analyses demonstrated that boosted gate drive capability, enhanced output current, and high field effect mobility were realized with inserted BN. The electrical breakdown behaviors of BN were investigated with regard to FrenkelPoole emission mechanism and Fowler-Nordheim tunneling theory for the low and high electric field regime, respectively. This work rendered BN as a perfect candidate for dielectric insulator used in fieldeffect transistors. (C) 2020 Elsevier B.V. All rights reserved.

【 授权许可】

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