Reactive co-sputtering of hematite doped silica (Fe2O3-SiO2) thin films

JOURNAL OF ALLOYS AND COMPOUNDS

卷:708

Article

Murphy, Neil R.¹  Ramana, Chintalapalle V.²  Sun, Lirong³  Jones, John G.¹  Grant, John T.⁴ 

[1] Air Force Res Lab, Mat & Mfg Directorate, Dayton, OH 45433 USA

[2] Univ Texas El Paso, Dept Mech Engn, El Paso, TX 79968 USA

[3] Gen Dynam Informat Technol, 5100 Springfield St, Dayton, OH 45431 USA

[4] Azimuth Corp, 4027 Colonel Glenn Highway, Beavercreek, OH 45431 USA

关键词: Reactive magnetron sputtering;    Thin films;    X-ray photoelectron spectroscopy;    Spectroscopic ellipsometry;    Optical characterization;    Hematite;   

DOI  :  10.1016/j.jallcom.2017.03.050

来源: Elsevier

【 摘 要 】

Fe2O3 doped silica films were deposited using a reactive cosputtering approach where the power applied to the Fe cathode was systematically varied from 20 to 80 W to change the Fe2O3 content, while SiO2 was deposited with a constant power of 100 Wapplied to the Si target. As a result of increases in Fe cathode power, from 20 to 80 W, the fraction of Fe2O3 relative to SiO2 was shown to increase from 0.01 to 0.15, as measured via x-ray photoelectron spectroscopy (XPS). XPS analysis was also used to analyze the valence states of the compounds present in the films, confirming the presence of both Fe2O3 (Fe3+) cations alongside v (Si4+). The observed increases in Fe2O3 content were associated with a rise in refractive index values from n(589) = 1.48 to n(589) = 1.72, while the extinction coefficient, k(589) remained below 0.01. Films deposited using the methods outlined within this work demonstrate Eg values ranging from highly transparent at above 3.5 eV, down to 1.52 eV, within the range for devices requiring efficient absorption of solar energy. Published by Elsevier B.V.

【 授权许可】

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