| JOURNAL OF ALLOYS AND COMPOUNDS | 卷:712 |
| Fabrication Fabrication of novel transparent Co3O4-TiO2 nanowires p-n heterojunction diodes for multiband photodetection applications | |
| Article | |
| Choudhuri, Bijit1  Mondal, Aniruddha2  Dwivedi, Shyam Murli Manohar Dhar2  Henini, Mohamed3  | |
| [1] Natl Inst Technol Agartala, Dept Elect & Commun Engn, Jirania 799046, India | |
| [2] Natl Inst Technol Durgapur, Dept Phys, Durgapur 713209, India | |
| [3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England | |
| 关键词: Semiconductors; Optical materials; Oxide materials; Thin films; Electron-phonon interactions; Photoconductivity and photovoltaics; | |
| DOI : 10.1016/j.jallcom.2017.04.068 | |
| 来源: Elsevier | |
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【 摘 要 】
Axial Co3O4 - TiO2 heterojunction nanowires (NWs) were synthesized by glancing angle deposition (GLAD) technique. The p-n heterojunction showed excellent rectification ratio of 2.26 x 10(2) at +/- 3.4 V. The forward turn on voltage of 1.5 V in the dark was reduced to 1 V under white light excitation on the device. The diode showed a maximum half-wave rectification efficiency of 7.77% at 200 Hz frequency operated with maximum +/- 10 V. The device showed maximum peak responsivity of 4.01 A/W and internal gain of 13.1 at 380 nm wavelength. The detectivity was calculated to be 2.82 x 10(11) and 1.69 x 10(11) Jones and the noise equivalent power was estimated to be 14.9 and 24.8 pW at 380 and 620 nm wavelength, respectively. The device spatial response showed sharp transition with rise and fall time of similar to 0.17s and 0.21s, respectively. (C) 2017 Elsevier B.V. All rights reserved.
【 授权许可】
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【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| 10_1016_j_jallcom_2017_04_068.pdf | 1079KB |
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