Photoluminescence efficiency significantly enhanced by surface modification of SiO2 coating on β-sialon: Eu2+ phosphor particle

JOURNAL OF ALLOYS AND COMPOUNDS

卷:741

Article

Zhang, Chenning¹  Uchikoshi, Tetsuo¹  Xie, Rong-Jun²  Liu, Lihong³  Sakka, Yoshio¹  Hirosaki, Naoto³ 

[1] Natl Inst Mat Sci, Res Ctr Funct Mat, Fine Particles Engn Grp, Tsukuba, Ibaraki 3050047, Japan

[2] Xiamen Univ, Coll Mat, Xiamen 361005, Fujian, Peoples R China

[3] Natl Inst Mat Sci, Res Ctr Funct Mat, Sialon Grp, Tsukuba, Ibaraki 3050044, Japan

关键词: Phosphor;    Photoluminescence;    White light-emitting diodes;   

DOI  :  10.1016/j.jallcom.2018.01.153

来源: Elsevier

【 摘 要 】

The surface modification on the beta-sialon: Eu2+ phosphor particles was successfully achieved by the SiO2 coating via a sol-gel method. The photoluminescence (PL) intensity of the phosphor was effectively enhanced and dominantly depending on the homogeneity of the SiO2 coating. It was found that more homogeneous and smooth SiO2 coating was responsible for higher PL intensity. The strongest emission intensity was obtained after the SiO2 homogenously coating under an optimized preparation condition of tetraethoxysilane (TEOS): H2O = 1: 1 in molar ratio by improving similar to 39% of intensity compared to that of the uncoated beta-sialon: Eu2+ phosphor, due to effective elimination on the surface groups of the phosphor particles. However, with increasing the molar ratio of TEOS: H2O, the PL intensity of the coated phosphor became deteriorated owing to the poor homogeneity in the coating layer, even became lower than that of the uncoated sample when TEOS: H2O = 1: 40 in molar ratio. This technique would be potentially applied in various phosphors assembling for the white light-emitting diodes by significantly improving their photoluminescence efficiencies. (C) 2018 Elsevier B.V. All rights reserved.

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