Mixtures of quasi-two and three dimensional hybrid organic-inorganic semiconducting perovskites for single layer LED

JOURNAL OF ALLOYS AND COMPOUNDS

卷:692

Article

Vassilakopoulou, Anastasia¹  Papadatos, Dionysios¹  Zakouras, Ioannis¹  Koutselas, Ioannis¹ 

[1] Univ Patras, Sch Nat Sci, Dept Mat Sci, Patras 26504, Greece

关键词: Low dimensional hybrid organic-inorganic semiconductors;    Perovskites;    Superradiance;    Electroluminescence;    Excitons;   

DOI  :  10.1016/j.jallcom.2016.09.076

来源: Elsevier

【 摘 要 】

New blends of simply synthesized quasi two-dimensional (quasi-2D) hydrophobic perovskite semiconductors, employed in high performance light emitting diodes (LEDs) which function due to excitonic energy transfer effects, are reported. These materials are self-assembled blends of 2D, quasi-2D and three-dimensional (3D) hybrid organic-inorganic semiconductors (HOIS). Moreover, shown for the first time, crude mixing of 3D perovskite and unprotonated amines provides similar semiconductors. HOIS reported here are based on the organic cations CH3NH3+, CH3(CH2)(7)CH = CH(CH2)(8)NH3+ or C6H5CH2CH2NH3+ and inorganic networks formed out of PbX42- anions (X = I, Br, Cl). HOIS exhibit strong bound excitonic states with increased oscillator strength at room temperature, tunable via simple halide substitution. HOIS blends manifest energy transfer effects, where adjacent nanoparticles of different band gap energies (E-g) transfer optical energy to those with the lowest E-g; the suggested light emission mechanism here. LED fabrication is attained via a single deposition of the hydrophobic mixture, reducing device complexity, cost and degradability. LED's diodic behavior is observed even under light albeit its photovoltaic and photoconductive quasi-2D and 3D components. LED devices exposed for over than four months under adverse laboratory conditions, showed stable light emission. Further research on this class of quasi-2D/3D HOIS mixtures is expected to lead to novel quantum electronic devices. (C) 2016 Elsevier B.V. All rights reserved.

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