Carrier transport in porous-Si/Ni/c-Si nanostructures

JOURNAL OF ALLOYS AND COMPOUNDS

卷:657

Article

Fedotov, Aleksander K.¹  Prischepa, Serghej L.²  Svito, Ivan A.¹  Redko, Sergey V.²  Saad, Anis³  Mazanik, Aleksander V.¹  Dolgiy, Alexei L.²  Fedotova, Vera V.⁴  Zukowski, Pawel⁵  Koltunowicz, Tomasz N.⁵ 

[1] Belarusian State Univ, Minsk, BELARUS

[2] Belarusian State Univ Informat & Radioelect, Minsk, BELARUS

[3] Al Balqa Appl Univ, Salt, Jordan

[4] Sci Pract Mat Res Ctr NAS Belarus, Minsk, BELARUS

[5] Lublin Univ Technol, Lublin, Poland

关键词: Phase transitions in nanocrystalline materials;    Electrical properties;    Resistance measurement;   

DOI  :  10.1016/j.jallcom.2015.10.105

来源: Elsevier

【 摘 要 】

In the present paper we have studied the peculiarities of carrier transport properties of nano-heterostructures containing silicon substrate covered with porous silicon layer, where pores were either filled or non-filled with ferromagnetic Ni clusters. We have carried out DC conductivity experiments as a function of temperature (ranging from 2 to 300 K) and porosity of porous silicon layer (between 30% and 70%). Presence of a surface layer with high resistance on the porous silicon top and its role in nano-heterostructure formation was revealed. It was shown that specific electrochemical kinetics of Ni deposition into porous silicon significantly influences resultant nanostructure resistance and high temperature conductance activation energy. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

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