Dielectric properties under high electric field for silicon doped alumina thin film with glass-like structure derived from sol-gel process

JOURNAL OF ALLOYS AND COMPOUNDS

卷:690

Article

Yao, Manwen¹  Su, Zhen¹  Zou, Pei¹  Chen, Jianwen¹  Li, Fei¹  Feng, Qian¹  Yao, Xi¹ 

[1] Tongji Univ, Sch Mat Sci & Engn, Funct Mat Res Lab, 4800 Caoan Rd, Shanghai 201804, Peoples R China

关键词: Alumina thin films;    Si doping;    Glass-like structure;    Breakdown strength;    Leakage current;    Dielectric constant and loss;   

DOI  :  10.1016/j.jallcom.2016.07.125

来源: Elsevier

【 摘 要 】

Dielectric Al2-xSixOy (X = 0.00, 0.02, 0.05, 0.10) thin films were deposited onto Pt/Ti/SiO2/Si substrates using sol-gel spin coating technology. The obtained materials were characterized via differential scanning calorimetry (DSC), scanning electron microscopy (SEM), fourier transform infrared spectrometry (FT-IR) and X-ray photoelectron spectrometry (XPS). The results show that the films are amorphous with Si atoms occupying Al atom sites forming Al-O-Si bonds and glass-like structure. The dielectric properties of the film were investigated. By means of silicon doping, the leakage current and the dielectric loss of the amorphous alumina films much reduced while the breakdown strength enhanced. Two orders of magnitude reduction in leakage current and significant enhancement in breakdown strength (up to 566 MV/m) can be achieved. The improved dielectric properties are attributed to the forming of Al-O-Si bonds and cation vacancies by the Si-addition. The structure modification enhanced the stability of alumina structure and promoted the ionic transportation to repair the defects of the alumina films. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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