Self-contained InGaN/GaN micro-crystal arrays as individually addressable multi-color emitting pixels on a deformable substrate

JOURNAL OF ALLOYS AND COMPOUNDS

卷:803

Article

Yang, Dong Won¹  Lee, Keundong^2,3  Jang, Suhee¹  Chang, Won Jun¹  Kim, Su Han¹  Lee, Jae Hyung¹  Yi, Gyu-Chul^2,3  Park, Won Il¹ 

[1] Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Inst Appl Phys, 1 Gwanak Ro, Seoul 151747, South Korea

[3] Seoul Natl Univ, Res Inst Adv Mat, 1 Gwanak Ro, Seoul 151747, South Korea

关键词: GaN;    Micro-LED;    Flexible LED;    Multi-color emission;    MOCVD;   

DOI  :  10.1016/j.jallcom.2019.06.374

来源: Elsevier

【 摘 要 】

InGaN/GaN micro-crystals (mu-crystals) are self-contained and individually-addressable light emitting crystals that have unique potential in the development of ultra-small and ultra-high resolution pixels for next-generation displays. In this study, we explore the electrically-driven light emission behavior of vertically standing InGaN/GaN micro-crystals (mu-crystals) with well-defined crystal facets and tunable size. InGaN/GaN mu-crystals have hollow pedestals weakly bound to the substrate surface, thus enabling individual manipulation and/or collective transfer to other target surfaces. Cyclic bending tests and finite element analysis (FEA) of the strain distribution further highlight the excellent mechanical deformability of a device layout consisting of mu-crystal pixels embedded in a polymeric matrix. Light-emitting diodes (LEDs) with individual InGaN/GaN mu-crystals exhibit strong electroluminescence (EL) with unique features such as variations in emission spectra with respect to crystal diameter and driving voltage bias. Comparative analyses of photoluminescence, cathodoluminescence, and electric potential simulation indicate a strong correlation between the EL wavelengths and dominant emitting regions of InGaN/GaN polyhedral crystal planes. This is further supported by scanning transmission electron microscopy of quantum well structures, which strongly depend on both size and the crystal facets. (C) 2019 Elsevier B.V. All rights reserved.

【 授权许可】

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