Preparation of Cu(In,Ga)Se2 photovoltaic absorbers by an aqueous metal selenite co-precipitation route

JOURNAL OF ALLOYS AND COMPOUNDS

卷:650

Article

Marti, R.¹  Oliveira, L.²  Lyubenova, T. Stoyanova¹  Todorov, T.³  Chassaing, E.⁴  Lincot, D.⁴  Carda, J. B.¹ 

[1] Univ Jaume 1, Dept Inorgan & Organ Chem, Castellon De La Plana 12071, Spain

[2] Inst Aeronaut & Space, Div Mat, Dept Aerosp Sci & Technol, BR-12228904 Sao Jose Dos Campos, Brazil

[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[4] Chim ParisTech, CNRS, EDF, Inst Res & Dev Photovolta Energy IRDEP,UMR 7174, F-78401 Chatou, France

关键词: CIGS;    Selenites;    Co-precipitation synthesis;    Amorphous powder;    Reduction process;   

DOI  :  10.1016/j.jallcom.2015.08.014

来源: Elsevier

【 摘 要 】

In this paper, we report a novel and simple solution-based approach for the fabrication of chalcopyrite Cu(In,Ga)Se-2 thin film solar cells. An aqueous co-precipitation method based on metal selenites, M-2(SeO3)(x) (M - Cu, In, Ga) precursors was investigated. The resulting powder, dispersed in a binder to form an ink, was coated on a substrate by doctor blade technique. A soft annealing treatment allowed the reduction of metal selenites into selenides. Further rapid thermal processing (RTP) achieved crystalline chalcopyrite absorber. The obtained layer provides good compositional control and adequate morphology for solar cell applications. The water-based synthesis is a sustainable and simple procedure, and together with doctor blade printing, provides a potential cost-effective advantage over conventional fabrication processes (vacuum-based deposition techniques). The short circuit current (J(SC)), open circuit voltage (V-OC), fill factor (FF), and total area power conversion efficiency (Eff.) of the device are 26 mA/cm(2), 450 mV, 62%, and 7.2%, respectively. The effective band gap of 1.12 eV confirmed Ga-incorporation in the CIGS crystal lattice. (C) 2015 Elsevier B.V. All rights reserved.

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