Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films

JOURNAL OF ALLOYS AND COMPOUNDS

卷:685

Article

Hatsuta, Naoki¹  Takemori, Daichi¹  Takashiri, Masayuki¹ 

[1] Tokai Univ, Dept Mat Sci, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 2591292, Japan

关键词: Electrodeposition;    Antimony telluride;    Thermoelectric;    Thermal annealing;    Thin films;   

DOI  :  10.1016/j.jallcom.2016.05.268

来源: Elsevier

【 摘 要 】

We investigated the effect of thermal annealing on structural and thermoelectric properties of p-type antimony telluride (Sb2Te3) thin films fabricated on a stainless steel (SUS304) substrate by electrodeposition. Antimony telluride thin films were annealed for 1 h at temperatures between 200 and 400 degrees C. We observed that the as-deposited thin film and thin films annealed at temperatures less than 250 degrees C possessed a stoichiometric atomic composition (Sb:Te = 40:60) with no impurities from the substrate. At the annealing temperature of 300 degrees C, we observed a certain amount of impurities (Fe, Cr, Ni) in the thin film. The Seebeck coefficient was decreased but the electrical conductivity was increased for films treated at 300 degrees C. As a result, the thin film exhibited a maximum power factor of 13.6 mu W/(cm.K-2). On further increasing the annealing temperature to 400 degrees C, the film structure and thermoelectric properties were drastically changed. The impurity concentration in the thin film reached approximately 50 at.%. The crystal structure of Sb2Te3 completely disappeared, and instead, other chemical compounds formed by alloying the elements of the thin film and the substrate were observed. (C) 2016 Elsevier B.V. All rights reserved.

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