Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates

JOURNAL OF ALLOYS AND COMPOUNDS

卷:509

Review

Moura, F.²  Aguiar, E. C.³  Longo, E.³  Varela, J. A.³  Simoes, A. Z.¹ 

[1] Univ Estadual Paulista Unesp, Fac Engn Guaratingueta, BR-12516410 Sao Paulo, Brazil

[2] Univ Fed Itajuba Unifei, BR-3590037 Itabira, MG, Brazil

[3] Univ Estadual Paulista, Inst Quim, Lab Interdisciplinar Ceram, BR-14801907 Sao Paulo, Brazil

关键词: Thin films;    Dielectrics;    Chemical synthesis;    X-ray diffraction;   

DOI  :  10.1016/j.jallcom.2010.12.184

来源: Elsevier

【 摘 要 】

Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

Free