Further insights into the electrical and thermal properties of carbon enriched silicon oxycarbide composites

JOURNAL OF ALLOYS AND COMPOUNDS

卷:889

Article

Mazo, M. A.¹  Caballero, A. C.²  Rubio, J.¹ 

[1] CSIC, Inst Ceram & Vidrio, Dept Quim Fis Superficies & Proc, C Kelsen 5, Madrid 28049, Spain

[2] CSIC, Inst Ceram & Vidrio, Dept Electroceran, C Kelsen 5, Madrid 28049, Spain

关键词: Composite materials;    Nanostructured materials;    Sintering;    Microstructure;    Scanning electron microscopy (SEM);    Transmission electron microscopy (TEM);   

DOI  :  10.1016/j.jallcom.2021.161698

来源: Elsevier

【 摘 要 】

Cheap, abundant and easily-obtained carbon fillers such as graphite (GR), carbon black (CB), lamp black and active carbon were successfully incorporated into a silicon oxycarbide (SiOC) matrix using attrition milling followed by spark plasma sintering to obtain dense crack-free bulk composites. Carbon-enriched SiOC composites (C-SiOC) showed enhanced electrical (sigma) and thermal (k) conductivities. Values as high as 667 Sm-1 for sigma and an increase of 63% for k compared with SiOCs were obtained when GR flakes were incorporated into the SiOC. Very interesting values were also achieved (250 Sm-1 and a 46% increase) when CB was used, due to the formation of a percolating network of highly-interconnected tortuous graphene-like carbon domains which promoted phonon/electron transport. Raman parameters such as the tortuosity index, 3D ordering of graphene layers and the I-2D/I-G ratio, in conjunction with AB stacking, were crucial for understanding the electronic and/or phonon transport. (C) 2021 The Authors. Published by Elsevier B.V. CC_BY_4.0

【 授权许可】

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