Phase width of kinetically stable ([PbSe]1+δ)1(TiSe2)1 ferecrystals and the effect of precursor composition on electrical properties

JOURNAL OF ALLOYS AND COMPOUNDS

卷:645

Article

Bauers, Sage. R.¹  Moore, Daniel B.¹  Ditto, Jeffrey¹  Johnson, David C.¹ 

[1] Univ Oregon, Eugene, OR 97403 USA

关键词: Thin films;    Crystal growth;    Vapor deposition;    Electrical transport;    X-ray diffraction;   

DOI  :  10.1016/j.jallcom.2015.04.228

来源: Elsevier

【 摘 要 】

Synthesis and transport properties of ([PbSe](1+delta))(1)(TiSe2)(1) ferecrystals made from several precursors of different compositions are reported. C-lattice parameters of crystallized compounds vary by under 0.01 angstrom though relative cation compositions normalized to selenium content are shown to vary by over 30%. Even with a deliberate wide-range of starting precursor compositions crystallized under kinetic conditions, the variation in electrical properties of ferecrystals is less than in similar compounds grown under equilibrium conditions. The growth process of a ferecrystal appears to push impurities of excess starting material in the precursor to the surface, until impurity density becomes too high and defects are incorporated as inclusions, replacing small domains within the layered structure. Transport properties of the many compounds formed cluster into regions, with samples deposited during the same deposition cycle showing less variation. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

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