Structural and electrical properties of Cu2Zn(Sn1-xSix)S4 (x=0, x=0.5) materials for photovoltaic applications

JOURNAL OF ALLOYS AND COMPOUNDS

卷:620

Review

Hamdi, M.^1,2  Louati, B.¹  Lafond, A.²  Guillot-Deudon, C.²  Chrif, B.³  Khirouni, K.³  Gargouri, M.¹  Jobic, S.²  Hlel, F.¹ 

[1] Univ Sfax, Fac Sci Sfax, Lab Etat Solide, Dept Phys, Sfax 3000, Tunisia

[2] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 03, France

[3] Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm, Gabes 6072, Tunisia

关键词: CZTS;    Semiconductor;    Electrical conductivity;   

DOI  :  10.1016/j.jallcom.2014.09.054

来源: Elsevier

【 摘 要 】

This work studied the electrical effects of the substitution of tin with silicon on p-type Cu2ZnSnS4 semiconductor compounds. To this purpose, two samples, namely Cu2ZnSnS4 and Cu2ZnSn0.5Si0.5S4, were prepared. The samples purities and homogeneities were characterized by both Energy Dispersive X-ray (EDX) spectroscopy and powder X-ray diffraction (PXRD). We observed that the temperature dependence of the electrical conductivity of materials exhibits a crossover from T (1/4) to T (1) dependence in the temperature range between 130 and 140 K. The characteristic temperature (T-0,T-Mott), the hopping distance (R-hop), the average hopping energy (Delta(hop)), the localization length (xi) and the density of states (N(E-F)), were determined, and their values were discussed within the models describing conductivity in p-type semiconductor. (C) 2014 Elsevier B.V. All rights reserved.

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