Short range order in Ge-As-Se glasses

JOURNAL OF ALLOYS AND COMPOUNDS

卷:623

Article

Pethes, I.¹  Kaban, I.^2,3  Wang, R. -P.⁴  Luther-Davies, B.⁴  Jovari, P.¹ 

[1] Wigner Res Ctr Phys, Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

[2] IFW Dresden, Inst Complex Mat, D-01171 Dresden, Germany

[3] Tech Univ Dresden, Inst Mat Sci, D-01062 Dresden, Germany

[4] Australian Natl Univ, Res Sch Phys & Engn, Laser Phys Ctr, Ctr Ultrahigh Bandwidth Devices Opt Syst CUDOS, Canberra, ACT 0200, Australia

关键词: Chalcogenide glasses;    Ge-As-Se;    Structure;    XRD;    EXAFS;    RMC;   

DOI  :  10.1016/j.jallcom.2014.11.002

来源: Elsevier

【 摘 要 】

The structure of GexAs10Se90-x (x = 10, 17.5, 22.5, 27.5, 30, 35) glasses as well as some other compositions extensively used in infrared optics, e.g. GASIR (R)(Ge22As20Se58) and AMTIR-1 (Ge33As12Se55) has been investigated by X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS) measurements at the Ge, As and Se K-edges. Structural models have been obtained by fitting simultaneously XRD and EXAFS data by the reverse Monte Carlo simulation technique. Unlike other IV-V-VI glasses (e.g. Ge-As-S, Ge-Sb-Te, Ge-Sb-Se, Ge-As-Te) Ge-As-Se glasses are characterized by the lack of preferential bonding and behave as random covalent networks: Ge-Ge, Ge-As or As-As bonds can be found in Se-rich compositions while Se-Se bonding remains in strongly Se-deficient glasses as well. (C) 2014 Elsevier B.V. All rights reserved.

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