Room temperature multiferroism in polycrystalline thin films of gallium ferrite

JOURNAL OF ALLOYS AND COMPOUNDS

卷:721

Article

Mishra, Monali¹  Roy, Amritendu²  Garg, Ashish³  Gupta, Rajeev^4,5  Mukherjee, Somdutta¹ 

[1] CSIR IMMT, Colloids & Mat Chem Dept, Bhubaneswar 751013, Orissa, India

[2] Indian Inst Technol, Sch Minerals Met & Mat Engn, Bhubaneswar 751007, Orissa, India

[3] Indian Inst Technol, Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India

[4] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

[5] Indian Inst Technol, Mat Sci Programme, Kanpur 208016, Uttar Pradesh, India

关键词: Polycrystalline thin films;    Multiferroics;    Ferrimagnetism;    Ferroelectricity;   

DOI  :  10.1016/j.jallcom.2017.05.268

来源: Elsevier

【 摘 要 】

We have synthesized (010) textured polycrystalline thin films of gallium ferrite (GaFeO3 or GFO) on nSi(100) and Pt/Si(111) substrates using sol-gel assisted spin coating technique. Structural characterization using x-ray diffraction and Raman spectroscopy confirms formation of single phase with crystallite size similar to 37-47 nm. Magnetic characterization demonstrates saturated magnetic hysteresis loop at room temperature and indicates that due to reduced crystallite size, ferri to pararnagnetic transition temperature, Tc similar to similar to 300 K is higher compared to bulk GFO, reported earlier. Room temperature piezo-response force microscopic analysis reveals local similar to 180 degrees phase switching of ferroelectric domains at very high coercive field, similar to 700 kV/cm, consistent with recent experimental and first -principles studies. Our study opens up the possibility of integrating polycrystalline GFO in novel room temperature multiferroic devices (C) 2017 Elsevier B.V. All rights reserved.

【 授权许可】

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