Thermoelectric properties improvement in Mg2Sn thin films by structural modification

JOURNAL OF ALLOYS AND COMPOUNDS

卷:797

Article

Safavi, Mahsasadat¹  Martin, Nicolas²  Linseis, Vincent³  Palmino, Frank¹  Cherioux, Frederic²  Billard, Alain¹  Yazdi, Mohammad Arab Pour¹ 

[1] Univ Bourgogne Franche Comte, UTBM, CNRS, Inst FEMTO ST,UMR 6174, Site Montbeliard, F-90010 Belfort, France

[2] Univ Bourgogne Franche Comte, UTBM, CNRS, Inst FEMTO ST,UMR 6174, 15B Ave Montboucons, F-25030 Besancon, France

[3] Linseis Messgerate GmbH, Vielitzer Str 43, D-95100 Selb, Germany

关键词: Mg2Sn;    Thin film;    Sputtering;    Thermoelectric properties;    Thermal stability;   

DOI  :  10.1016/j.jallcom.2019.05.214

来源: Elsevier

【 摘 要 】

Mg-Sn thin films (21 <= at. % Sn <= 42.5) were deposited by magnetron sputtering in the argon atmosphere. The structure and morphology of the films were characterized as a function of the composition. Mg2Sn structure was changed from stable face-centered cubic to metastable orthorhombic structure while the content of Sn in the films increased. The influence of this structural modification on thermoelectric properties was discussed in a wide range of temperatures (30-200 degrees C). The film carrier concentration and mobility were measured to explain the electronic transport behavior as a function of the film structural modifications. The maximum figure of merit ZT approximate to 0.26 at 200 degrees C was reached for the film with 36 at. % Sn while a mixture of cubic and orthorhombic Mg2Sn structures coexisted. An annealing treatment was performed under vacuum (similar to 10(-4) Pa) at different temperatures (up to 600 degrees C) to determine the limit of structural and morphological stability of this film. (C) 2019 Elsevier B.V. All rights reserved.

【 授权许可】

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