On the properties of GaP supersaturated with Ti

JOURNAL OF ALLOYS AND COMPOUNDS

卷:820

Article

Olea, J.¹  Algaidy, S.¹  del Prado, A.¹  Garcia-Hemme, E.¹  Garcia-Hernansanz, R.¹  Montero, D.¹  Caudevilla, D.¹  Gonzalez-Diaz, G.¹  Soria, E.^2,3  Gonzalo, J.² 

[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Estruct Mat Fis Term & Elect, E-28040 Madrid, Spain

[2] CSIC, Inst Opt, Laser Proc Grp, Serrano 121, E-28006 Madrid, Spain

[3] SAFTRA Photon, Jesenna 5, Kosice 04001, Slovakia

关键词: Gallium compounds;    Ion implantation;    Laser applications;    Photovoltaic cells;    Titanium;   

DOI  :  10.1016/j.jallcom.2019.153358

来源: Elsevier

【 摘 要 】

We have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photoconductance at energies below the bandgap of GaP and it seems to be passivated by a Ga defective GaPO oxide layer during the laser process. Passivation is consistently analyzed by sheet photoconductance and photoluminescence measurements. We report on the structural quality of the resulting layers and analyze the energy of the new optical transitions measured on GaP:Ti. A collapse found in the sheet photoconductance spectra of GaP:Ti samples fabricated on undoped substrates is explained by the negative photoconductivity phenomenon. (C) 2019 Elsevier B.V. All rights reserved.

【 授权许可】

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