Ultra-thin and high transparent Cu2ZnSnSe4/NiOx double-layered inorganic hole-transporting layer for inverted structure CH3NH3PbI3 perovskite solar cells

JOURNAL OF ALLOYS AND COMPOUNDS

卷:873

Article

Tien, Ching-Ho¹  Chen, Lung-Chien¹  Lee, Kuan-Lin¹ 

[1] Natl Taipei Univ Technol, Dept Electroopt Engn, 1,Sec 3,Chung Hsiao E Rd, Taipei 10608, Taiwan

关键词: RF-magnetron sputtering;    Perovskite solar cells;    CZTSe;    Hole-transport material;    Inorganic hole transporting layer;   

DOI  :  10.1016/j.jallcom.2021.159804

来源: Elsevier

【 摘 要 】

Inorganic hole transporting layer (HTL) plays the most important role to fabrication of low cost and stable in perovskite solar cells. Herein, we present low cost highly transparent and ultra-thin sputtered Cu2ZnSnSe4 (CZTSe) combined with solution-processed NiOx films as a double-layered inorganic HTL applied in inverted CH3NH3PbI3 perovskite solar cells, which is beneficial to enhance hole extraction and suppress electron transport. Sputtered CZTSe films have high transmittance (> 85%), high hole mobility (15.1 cm(2) v(-1) s(-1)), low resistivity (0.33 Omega-cm), earth-abundant elemental constituents, and non-toxic properties, which is one of the promising p-type inorganic hole-transporting material. An obvious enhancement of open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of a 600 degrees C-annealed-CZTSe/NiOx double-layered HTL based inverted perovskite solar cell was observed, and final Voc, Jsc, FF, and PCE of 1.03 V, 17.9 mA cm(-2), 73%, and 13.46% were achieved, respectively. Importantly, the ultra-thin CZTSe/NiOx double-layer HTL makes the perovskite solar cell exhibit improved stability, of which this device remains 73% of the initial PCE value after 350 h' storage in the nitrogen-filled glove box. (c) 2021 The Author(s). Published by Elsevier B.V. CC_BY_NC_ND_4.0

【 授权许可】

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