| JOURNAL OF ALLOYS AND COMPOUNDS | 卷:495 |
| AgGeSe-based bulk glasses: A survey of their fundamental properties | |
| Article; Proceedings Paper | |
| Urena, M. A.1  Fontana, M.1  Piarristeguy, A.2  Arcondo, B.1  | |
| [1] UBA CONICET, Lab Solidos Amorfos, Fac Ingn, INTECIN, Buenos Aires, DF, Argentina | |
| [2] Univ Montpellier 2, PMDP, Inst Charles Gerhardt, UMR CNRS 5253, F-34095 Montpellier, France | |
| 关键词: Amorphous materials; Liquid quenching; Scanning electron microscopy; Ionic conduction; | |
| DOI : 10.1016/j.jallcom.2009.11.081 | |
| 来源: Elsevier | |
PDF
|
|
【 摘 要 】
GexSe1-x system is a well-known glass former for x <= 0 43. The addition of third elements (i e Ag, Sb, and Sn) even up to high concentrations is possible without affecting its glass forming ability These metals confer these glasses very particular properties Ag-Ge-Se glasses are semiconductors for low Ag concentration whereas they are fast ionic conductors above 8 at.% Ag. The structure, thermal behaviour and transport properties of these glasses are analyzed Metal doping is easily performed in chalcogenide glasses It has been observed that, in contrast to crystalline semiconductors, their transport properties were not substantially affected as the valence bonds of the doping elements are completely saturated. The resource of doping with a Fe-57 probe is widely employed in the materials study in order to characterize the short-range order of their structure by means of Mossbauer effect spectroscopy These results are discussed and correlated to the structure and morphology of this chalcogenide system (C) 2009 Elsevier B V. All rights reserved
【 授权许可】
Free
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| 10_1016_j_jallcom_2009_11_081.pdf | 479KB |
PDF