Structural and electrical study of the topological insulator SnBi2Te4 at high pressure

JOURNAL OF ALLOYS AND COMPOUNDS

卷:685

Article

Vilaplana, R.¹  Sans, J. A.²  Manjon, F. J.²  Andrada-Chacon, A.³  Sanchez-Benitez, J.³  Popescu, C.⁴  Gomis, O.¹  Pereira, A. L. J.²  Garcia-Domene, B.⁵  Rodriguez-Hernandez, P.⁶  Munoz, A.⁶  Daisenberger, D.⁷  Oeckler, O.⁸ 

[1] Univ Politecn Valencia, MALTA Consolider Team, Ctr Tecnol Fis, Valencia, Spain

[2] Univ Politecn Valencia, MALTA Consolider Team, Inst Diseno Fabricac & Prod Automatizada, Valencia, Spain

[3] Univ Complutense Madrid, MALTA Consolider Team, Dept Quim Fis, Madrid, Spain

[4] ALBA CELLS, Barcelona, Spain

[5] Univ Valencia, MALTA Consolider Team, Dept Fis Aplicada, ICMUV, Valencia, Spain

[6] Univ La Laguna, MALTA Consolider Team, Inst Mat & Nanotecnol, Dept Fis, Tenerife, Spain

[7] Diamond Light Source Ltd, Didcot, Oxon, England

[8] Univ Leipzig, Inst Mineral Kristallog & Mat Wissensch, D-04109 Leipzig, Germany

关键词: High pressure;    X-ray diffraction;    Transport properties;    Topological insulators;    Electronic topological transition;   

DOI  :  10.1016/j.jallcom.2016.06.170

来源: Elsevier

【 摘 要 】

We report high-pressure X-ray diffraction and electrical measurements of the topological insulator SnBi2Te4 at room temperature. The pressure dependence of the structural properties of the most stable phase of SnBi2Te4 at ambient conditions (trigonal phase) have been experimentally determined and compared with results of our ab initio calculations. Furthermore, a comparison of SnBi2Te4 with the parent compound Bi2Te3 shows that the central TeSnTe trilayer, which substitutes the Te layer at the center of the TeBiTeBiTe layers of Bi2Te3, plays a minor role in the compression of SnBi2Te4. Similar to Bi2Te3, our resistance measurements and electronic band structure simulations in SnBi2Te4 at high pressure suggest that this compound exhibits a pressure-induced electronic topological transition or Lifshitz transition between 3.5 and 5.0 GPa. (C) 2016 Published by Elsevier B.V.

【 授权许可】

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