Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films

JOURNAL OF ALLOYS AND COMPOUNDS

卷:684

Article

Duarte, A. C.^1,2  Franco, N.³  Viana, A. S.⁴  Polushkin, N. I.^1,2  Silvestre, A. J.^2,5  Conde, O.^1,2 

[1] Univ Lisbon, Fac Ciencias, Dept Fis, P-1749016 Lisbon, Portugal

[2] Ctr Fis & Engn Mat Avancados CeFEMA, P-1049001 Lisbon, Portugal

[3] Univ Lisbon, IST, Ctr Ciencias & Tecnol Nucl, P-2695066 Bobadela, Portugal

[4] Univ Lisbon, Fac Ciencias, Ctr Quim & Bioquim, P-1749016 Lisbon, Portugal

[5] Inst Politecn Lisboa, ISEL, Area Dept Fis, P-1959007 Lisbon, Portugal

关键词: CrO2 thin films;    Chemical vapor deposition;    Argon assisted growth;    Half metals;    X-ray diffraction;    Magnetic measurements;   

DOI  :  10.1016/j.jallcom.2016.05.167

来源: Elsevier

【 摘 要 】

A comparative study of the structural, microstructural and magnetic properties of CrO2 thin films grown onto (110) and (100) TiO2 rutile single crystal substrates by chemical vapor deposition (CVD), using CrO3 as chromium precursor and either oxygen or argon as carrier gas is presented. Our results show that growth under argon carrier gas leads to high quality CrO2 epilayers with structural and magnetic properties similar to those obtained using the more standard oxygen carrier gas. Furthermore, we interpret the larger magnetic coercivity observed for the (110) oriented films in terms of their microstructure, in particular of the highest strain and edge roughness of the building structures of the CrO2 epilayers, which are settled by the substrate crystallographic orientation. (C) 2016 Elsevier B.V. All rights reserved.

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