Scratching of silicon surfaces

INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES

卷:162

Article

Budnitzki, M.¹  Kuna, M.¹ 

[1] TU Bergakad Freiberg, Inst Mech & Fluid Dynam, Lampadiusstr 4, D-09599 Freiberg, Germany

关键词: Silicon;    Scratching;    Simulation;    Phase transition;    Wire sawing;    Grinding;   

DOI  :  10.1016/j.ijsolstr.2018.11.024

来源: Elsevier

【 摘 要 】

Nanoscale scratching of silicon surfaces is the elementary abrasive event for various machining techniques including fixed abrasive wire saw slicing, grinding, elliptical ultrasonic cutting and single-point diamond turning. The understanding of this process is essential for improving the surface quality and reducing sub-surface damage. Nanoscratching experiments are performed using a well characterized diamond tip geometry. The finite element method is employed in order to simulate the scratching process with a continuum constitutive model developed for phase transformation in silicon (Budnitzki, M., Kuna, M., 2016. Stress induced phase transitions in silicon. JMPS 95, 64-91). The required material parameters were determined from indentation experiments in a (111) single crystal Si wafer. The simulation results agree very well with data from scratch experiments without requiring additional calibration. (C) 2018 Elsevier Ltd. All rights reserved.

【 授权许可】

Free