Numerical approximation of Turing patterns in electrodeposition by ADI methods

JOURNAL OF COMPUTATIONAL AND APPLIED MATHEMATICS

卷:236

Article

Sgura, Ivonne¹  Bozzini, Benedetto²  Lacitignola, Deborah³ 

[1] Univ Salento Lecce, Dipartimento Matemat & Fis Ennio De Giorgi, I-73100 Lecce, Italy

[2] Univ Salento Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[3] Univ Cassino & Lazio Meridionale, Dipartimento Ingn Elettr & Informaz, I-03043 Cassino, Italy

关键词: High order finite difference schemes;    IMEX methods;    ADI methods;    Reaction-diffusion systems;    Turing patterns;    Schnakenberg model;   

DOI  :  10.1016/j.cam.2012.03.013

来源: Elsevier

【 摘 要 】

In this paper we study the numerical approximation of Turing patterns corresponding to steady state solutions of a PDE system of reaction-diffusion equations modeling an electrodeposition process. We apply the Method of Lines (MOL) and describe the semi-discretization by high order finite differences in space given by the Extended Central Difference Formulas (ECDFs) that approximate Neumann boundary conditions (BCs) with the same accuracy. We introduce a test equation to describe the interplay between the diffusion and the reaction time scales. We present a stability analysis of a selection of time-integrators (IMEX 2-SBDF method, Crank-Nicolson (CN), Alternating Direction Implicit (ADI) method) for the test equation as well as for the Schnakenberg model, prototype of nonlinear reaction-diffusion systems with Turing patterns. Eventually, we apply the ADI-ECDF schemes to solve the electrodeposition model until the stationary patterns (spots & worms and only spots) are reached. We validate the model by comparison with experiments on Cu film growth by electrodeposition. (C) 2012 Elsevier B.V. All rights reserved.

【 授权许可】

Free