Adsorption mechanism of gallium(III) and indium(III) onto gamma-Al2O3

JOURNAL OF COLLOID AND INTERFACE SCIENCE

卷:188

Article

Lin, CF ; Chang, KS ; Tsay, CW ; Lee, DY ; Lo, SL ; Yasunaga, T

关键词: Ga(III);    In(III);    gamma-Al2O3;    adsorption;    water exchange rate;    linear free energy;    intrinsic adsorption rate constants;   

DOI  :  10.1006/jcis.1996.4739

来源: Elsevier

【 摘 要 】

The adsorption mechanism of trivalent Ga and In onto gamma-Al2O3 was investigated using a triple-layer model simulation and pressure-jump technique, Bidentate Ga3+ and In3+ and monodentate GaOH2+/InOH2+ are the most likely surface species responsible for Ga(III)/In(III) adsorption, Sorption of Ga(III) and In(III) can be interpreted as an associative process, The adsorption pathway is a two-step mechanism: proton release from surface hydroxyl group(s) followed by coordination of Ga(III)/In(III) species to the depronated site(s), Intrinsic adsorption rate constants cannot be estimated with a liner free-energy relationship between the adsorption rate constant and the rate of water exchange, which is developed solely based on the dissociative sorption mechanism of divalent ions. (C) 1997 Academic Press.

【 授权许可】

Free