Optical properties of Ar ions irradiated nanocrystalline ZrC and ZrN thin films

JOURNAL OF NUCLEAR MATERIALS

卷:488

Article

Martin, C.¹  Miller, K. H.²  Makino, H.³  Craciun, D.⁴  Simeone, D.^5,6  Craciun, V.⁴ 

[1] Ramapo Coll, Mahwah, NJ 07430 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[3] Kochi Univ Technol, Res Inst, Kochi 7828502, Japan

[4] Natl Inst Laser Plasma & Radiat Phys, Bucharest, Romania

[5] CEN Saclay France, CEA DEN DANS DM2S SERMA LEPP LRC CARMEN, F-92292 Chatenay Malabry, France

[6] Ecole Cent Paris, CNRS SPMS UMR8785, LRC CARMEN, F-92292 Chatenay Malabry, France

关键词: ZrC;    ZrN;    Pulsed laser deposition;    Nanocrystalline films;    Infrared optical properties;   

DOI  :  10.1016/j.jnucmat.2017.02.041

来源: Elsevier

【 摘 要 】

Employing wide spectral range (0.06-6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 key Ar ion irradiation on optical and electronic properties of nanocrystalline ZrC and ZrN thin films, which were obtain by the pulsed laser deposition technique. Both in ZrC and ZrN, we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate and an increase of the zero frequency conductivity, i.e. possible increase in mobility, at higher irradiation fluence. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major changes in the chemical bonding. HE-XPS investigations further confirms the stability of the Zr-C and Zr-N bonds, despite a small increase in the surface region of the Zr-O bonds fraction with increasing irradiation fluence. (C) 2017 Elsevier B.V. All rights reserved.

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