期刊论文详细信息
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 卷:511
Structural and magnetotransport characterization of magnetron sputtered co-doped Bi2Te3 thin films
Article
Pilidi, A.1  Speliotis, Th1  Litsardakis, G.2 
[1] Natl Ctr Sci Res Demokritos, Inst Nanosci & Nanotechnol, Athens, Greece
[2] Aristotle Univ Thessaloniki, Dept Elect & Comp Engn, Thessaloniki, Greece
关键词: Thin films;    Topological Insulators;    Magnetotransport properties;   
DOI  :  10.1016/j.jmmm.2020.166971
来源: Elsevier
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【 摘 要 】

In this work we investigate the growth and magnetotransport properties of Co doped topological insulator Bi2Te3 deposited on Si(1 1 1) substrates by means of DC magnetron sputtering. The structure and morphology of the films were studied using X-Ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). Magnetotransport measurements were performed with a Physical Property Measurement System (PPMS). The pristine samples have a metallic behavior while the Co-doped are semiconductors. The magnetoresistance curves exhibit a sharp cusp for temperatures below 20 K that correspond to weak antilocalization phenomena and are analysed using the Hikami-Larkin-Nagaoka model. The WAL phenomenon vanishes with temperature increase due to electron-phonon scattering. The doped samples present an ambipolar transport with a change in the sign of the dominant carriers with temperature.

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