Monte Carlo simulation of magnetic phase transitions in Mn-doped ZnO

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:323

Article

Drissi, L. B.^1,2  Benyoussef, A.^1,3  Saidi, E. H.^1,4,5  Bousmina, M.¹ 

[1] Inst Nanomat & Nanotechnol MAScIR, INANOTECH, Rabat, Morocco

[2] Abdus Salaam Int Ctr Theoret Phys, Trieste, Italy

[3] Univ Mohammed 5, Fac Sci, Lab Magnetisme & PHE, Rabat, Morocco

[4] Univ Mohammed 5, Fac Sci, LPHE, Rabat, Morocco

[5] Ctr Phys & Math Rabat, CPM, Rabat, Morocco

关键词: MC simulation;    DMS;    ZnO;    Magnetic property;    RKKY;    T-Curie;    Carrier mediated ferromagnetism;   

DOI  :  10.1016/j.jmmm.2011.06.031

来源: Elsevier

【 摘 要 】

The magnetic properties of Mn-doped ZnO semiconductor have been investigated using the Monte Carlo method within the Ising model. The temperature dependences of the spontaneous magnetization, specific heat and magnetic susceptibility have been constructed for different concentrations of magnetic dopant Mn and different carrier concentrations. The exact values of Mn concentration and carrier concentration at which high temperature transition occurs are determined. An alternative for the explanation of some controversies concerning the existence and the nature of magnetism in Mn diluted in ZnO systems is given. Other features are also studied. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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