Atomic-layer stacking dependence of the magnetocrystalline anisotropy in Fe-Co multilayer thin films at MgO(001) interface

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:537

Article

Nakamura, K.¹  Nozaki, K.¹  Hayashi, K.¹  Pradipto, A. -M.²  Weinert, M.³  Oguchi, T.⁴ 

[1] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan

[2] Inst Teknol Bandung, Fac Math & Nat Sci, Bandung 40132, Indonesia

[3] Univ Wisconsin, Dept Phys, Milwaukee, WI 53201 USA

[4] Osaka Univ, Inst Sci & Ind Res, Osaka, Ibaraki 5670047, Japan

关键词: Magnetocrystalline anisotropy;    atomic-layer stacking dependence;    first-principles calculations;   

DOI  :  10.1016/j.jmmm.2021.168175

来源: Elsevier

【 摘 要 】

Magnetocrystalline anisotropy (MA) and electric-field-induced modification of the MA energy (E-field-induced MA modification) of Co-Fe multilayer thin films at MgO(001) interface with respect to atomic-layer stacking were investigated using first-principles calculations combined with the cluster expansion method. Although the magnetic quantities have very complicated dependence on atomic-layer stacking, we find that there are key short-range atomic-layer stackings. At the MgO interface, a double atomic-layer stacking of Fe on the MgO enhances an interfacial perpendicular MA while there is no role of the short-range stacking in the E-field-induced MA modification where a single Fe atomic-layer at the interface plays a role. The physical origins underlying these trends were subsequently elucidated by band structure calculations.

【 授权许可】

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