Sixteen-state magnetic memory based on the extraordinary Hall effect

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:324

Article

Segal, A.¹  Karpovski, M.¹  Gerber, A.¹ 

[1] Tel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, Israel

关键词: Multi-bit magnetic memory;    Extraordinary Hall effect;   

DOI  :  10.1016/j.jmmm.2011.12.001

来源: Elsevier

【 摘 要 】

We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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