Defects induced ferromagnetism in Mn doped ZnO

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:323

Article

Chattopadhyay, S.¹  Neogi, S. K.¹  Sarkar, A.²  Mukadam, M. D.³  Yusuf, S. M.³  Banerjee, A.¹  Bandyopadhyay, S.¹ 

[1] Univ Calcutta, Dept Phys, Kolkata 700009, India

[2] Bangabasi Morning Coll, Dept Phys, Kolkata 700009, India

[3] Bhabha Atom Res Ctr, Div Solid State Phys, Bombay 400085, Maharashtra, India

关键词: Mn doped ZnO;    Dilute magnetic semiconductor;    Defect;   

DOI  :  10.1016/j.jmmm.2010.09.042

来源: Elsevier

【 摘 要 】

Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 degrees C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sized of the samples are very close to each other (similar to 32 +/- 4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 mu(B)/Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choices of milling period and annealing conditions is required. (C) 2010 Elsevier B.V. All rights reserved.

【 授权许可】

Free