Novel low field magnetoresistive devices based on manganites

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:310

Article

Ruotolo, A. ; Granozio, F. Miletto ; Oropallo, A. ; Pepe, G. P. ; Perna, P. ; di Uccio, U. Scotti ; Pullini, D. ; Innocenti, G. ; Perlo, P.

关键词: spin polarized transport;    nanoscale contacts;    magnetic devices;   

DOI  :  10.1016/j.jmmm.2006.10.689

来源: Elsevier

【 摘 要 】

We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. (C) 2006 Elsevier B.V. All rights reserved.

【 授权许可】

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