Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:481

Article

Hazra, Binoy Krishna¹  Kaul, S. N.¹  Srinath, S.¹  Raja, M. Manivel²  Rawat, R.³  Lakhani, Archana³ 

[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, India

[2] Def Met Res Lab, Hyderabad 500058, India

[3] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

关键词: Anomalous Hall effect;    Electron-diffuson scattering;    electrical- and magneto-transport;    Weak localization;    electron-electron interaction effects;    Heusler alloy;    thin films;   

DOI  :  10.1016/j.jmmm.2019.02.081

来源: Elsevier

【 摘 要 】

An exhaustive study of the influence of disorder on anomalous Hall (AH) resistivity (rho(AH)(xy)), longitudinal resistivity (rho(xy)), magnetoresistance and magnetization of Co2FeSi (CFS) Heusler alloy thin films of fixed (50 nm) thickness, deposited on Si (1 1 1) substrate, reveals the following. Regardless of the degree of disorder present, the side-jump mechanism gives a dominant contribution to rho(AH)(xy). A new and novel contribution to both rho(xx) and rho(AH)(xy), characterized by the logarithmic temperature (- lnT) dependence at temperatures below the minimum (T

【 授权许可】

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