Optical properties of III-Mn-V ferromagnetic semiconductors

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:320

Review

Burch, K. S.¹  Awschalom, D. D.²  Basov, D. N.³ 

[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[3] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

关键词: Magnetic semiconductor;    Optical property;    Metal to insulator transition;   

DOI  :  10.1016/j.jmmm.2008.08.060

来源: Elsevier

【 摘 要 】

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, the diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices. (C) 2008 Elsevier B.V. All rights reserved.

【 授权许可】

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