Structure and electronic spectroscopy of steps on GaAs(110) surfaces

SURFACE SCIENCE

卷:606

Article

Gaan, S.¹  Feenstra, R. M.¹  Ebert, Ph.²  Dunin-Borkowski, R. E.²  Walker, J.³  Towe, E.³ 

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[3] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

关键词: Scanning tunneling microscopy;    Scanning tunneling spectroscopy;    Surface steps;    gallium arsenide;   

DOI  :  10.1016/j.susc.2011.08.017

来源: Elsevier

【 摘 要 】

Steps on GaAs(110) surfaces, with step-normal vectors parallel to [001], are studied by scanning tunneling microscopy and spectroscopy. Two possible orientations of the steps occur, with outward normal vectors of [001] or [00 - 1], which in simple bulk-terminated form have Ga (cations) or As (anions) on their edges, respectively. The latter type of step in n-type or undoped material is found to retain its bulk-terminated form. A band of states is observed extending out from the valence band, associated with the dangling bonds of the terminating As atoms. It is argued that compensation of the dangling bonds on the step edges is the driving force for the step structure, producing reconstruction of the step edges in certain cases. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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