Adsorption and decomposition of SiH4 on Pd(111)

SURFACE SCIENCE

卷:602

Article

Kershner, Dylan C.¹  Medlin, J. Will¹ 

[1] Univ Colorado, Dept Chem & Biol Engn, Boulder, CO 80309 USA

关键词: metal-semiconductor interfaces;    metal-insulator interfaces;    silicide;    palladium;    silane;    electron spectroscopy;    temperature programmed desorption;   

DOI  :  10.1016/j.susc.2007.11.023

来源: Elsevier

【 摘 要 】

SiH(4) adsorption and decomposition on Pd(111) has been studied using high resolution electron energy loss spectroscopy (HREELS), temperature programmed desorption (TPD), and Auger electron spectroscopy (AES). SiH4 was found to adsorb dissociatively on Pd(111) at 150 K, resulting in SiH(X) species populating the Pd(111) surface. Spectroscopic data indicate that the primary SiH(X) species on the surface is SiH(3), possibly mixed with smaller amounts of SiH(2). HREELS data show the majority of surface SiH(X) species dissociate by approximately 250 K. TPD experiments show only H(2) desorption; however, the kinetics of H2 desorption are clearly affected by SiH4 coverage. AES confirms the presence of Si on the Pd(111) surface above 250 K and shows complete diffusion of Si into the Pd bulk above 950 K. A slight broadening of the Si AES peak may indicate the presence of a Pd silicide above 500 K. (C) 2007 Elsevier B.V. All rights reserved.

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