A near-edge X-ray absorption fine structure study of atomic layer epitaxy: the chemistry of the growth of CdS layers on ZnSe(100)

SURFACE SCIENCE

卷:415

Article

Han, M ; Luo, Y ; Moryl, JE ; Osgood, RM ; Chen, JG

关键词: atomic layer epitaxy (ALE);    CdS;    (CH3)(2)Cd;    heteroepitaxy;    H2S;    near-edge X-ray absorption fine structure (NEXAFS);    surface chemistry;    synchrotron radiation;    temperature programmed desorption (TPD);    thin film deposition;    II-IV semiconductors surface chemistry;    ZnSe(100);   

DOI  :  10.1016/S0039-6028(98)00453-1

来源: Elsevier

【 摘 要 】

Atomic layer epitaxy (ALE) using a binary reaction sequence of the precursors dimethylcadmium (DMCd) and hydrogen sulfide (H2S) is shown to produce epitaxial layers of CdS on a ZnSe(100) substrate. Near-edge X-ray adsorption fine structure (NEXAFS) spectra taken at the carbon K-edge and sulfur L-edge are consistent with a growth model based on self-limiting surface reactions and support a mechanism based on sequential surface ligand displacement. This evidence, combined with a TPD study, shows the presence of alternating methyl- and hydride-terminated surfaces, which are passivated to further uptake of Cd or S, respectively. Layer-by-layer growth of good quality CdS was confirmed by comparison of NEXAFS spectra of bulk CdS with our grown films. (C) 1998 Elsevier Science B.V. All rights reserved.

【 授权许可】

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