Origins of GaN(0001) surface reconstructions

SURFACE SCIENCE

卷:541

Article

Vézian, S ; Semond, F ; Massies, J ; Bullock, DW ; Ding, Z ; Thibodo, PM

关键词: gallium nitride;    molecular beam epitaxy;    reflection high-energy electron diffraction (RHEED);    scanning tunneling microscopy;    surface relaxation and reconstruction;   

DOI  :  10.1016/S0039-6028(03)00950-6

来源: Elsevier

【 摘 要 】

The reconstructions of the Ga polarity GaN(0001) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are observed with RHEED by analyzing patterns while the substrate is exposed to a fixed NH3 flux or after depositing known amounts of Ga as a function of substrate temperature. In situ STM images reveal that only a few of these reconstructions yield long-range periodicity in real space. The controversial role of arsenic on Ga induced reconstructions was also investigated using two independent MBE chambers and X-ray photoelectron spectroscopy. (C) 2003 Elsevier B.V. All rights reserved.

【 授权许可】

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