Structural relaxation and metal-insulator transition at the interface between SrTiO3 and LaAlO3

SURFACE SCIENCE

卷:605

Article

Pavlenko, Natalia^1,2  Kopp, Thilo² 

[1] Inst Condensed Matter Phys, UA-79011 Lvov, Ukraine

[2] Univ Augsburg, EKM, D-86135 Augsburg, Germany

关键词: Density functional calculations;    Surface relaxation and reconstruction;    Surface electronic phenomena;    Titanium oxide;    Aluminum oxide;    Semiconductor-semiconductor interfaces;    Metal-insulator interfaces;   

DOI  :  10.1016/j.susc.2011.03.016

来源: Elsevier

【 摘 要 】

The electronic structure of interfaces between LaAlO3 and SrTiO3 is studied using local spin density approximation (LSDA) with intra-atomic Coulomb repulsion (LSDA + U). We find that the nature of the interface metallic states is strongly affected by the type of the structure (sandwich or bilayer) and by the termination surface of LaAlO3. In all structures the atomic relaxation plays a crucial role in the electronic properties of the system. While in sandwiches the structural relaxation produces a significant polarization in SrTiO3 and a splitting of Ti 3d(xy) orbitals. in AlO2-terminated bilayers the relaxation occurs primarily in LaAlO3 and results in an insulator-metal transition which has been observed experimentally with increasing thickness of the LaAlO3 layer. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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