SURFACE SCIENCE | 卷:529 |
The bonding sites and structure of C60 on the Si(100) surface | |
Article | |
Godwin, PD ; Kenny, SD ; Smith, R | |
关键词: computer simulations; density functional calculations; chemisorption; silicon; fullerenes; | |
DOI : 10.1016/S0039-6028(03)00074-8 | |
来源: Elsevier | |
【 摘 要 】
The possible structures of C-60 on the Si(100) surface have been investigated using ab initio total energy minimisations. The results show that fullerenes bond to the silicon surface by breaking carbon-carbon double bonds. One electron from the broken bond is contributed to the carbon-silicon bond. The second electron is generally involved in forming a new pi-bond within the fullerene cage, or, for the less energetically favourable structures, is delocalised over the surrounding bonds. The carbon-silicon bond formed is primarily covalent with some charge transfer. (C) 2003 Elsevier Science B.V. All rights reserved.
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10_1016_S0039-6028(03)00074-8.pdf | 2087KB | download |