The adsorption of silane, disilane and trisilane on polycrystalline silicon: A transient kinetic study

SURFACE SCIENCE

卷:367

Article

Weerts, WLM ; deCroon, MHJM ; Marin, GB

关键词: adsorption kinetics;    chemisorption;    models of surface kinetics;    molecule-solid reactions;    silane;    silicon;    surface chemical reaction;   

DOI  :  10.1016/S0039-6028(96)00876-X

来源: Elsevier

【 摘 要 】

The adsorption of silane, disilane and trisilane on polycrystalline silicon was investigated using temporal analysis of products (TAP) following on admission of a reactant pulse in the temperature range 300-1000 K and at pressures typical for low-pressure chemical vapour deposition. Up to 650 K a slow adsorption process is operative for the three silanes. A quantitative description of the adsorption in this temperature range is possible with a mechanism based on an insertion reaction of the silanes into surface hydrogen bonds. Above 650 K a much faster mode of adsorption is observed, which for the higher silanes is accompanied by silane formation. Homogeneous gas-phase reactions can be excluded. Silane adsorption above 820 K can be described quantitatively with a dual-site adsorption mechanism.

【 授权许可】

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