The reactions of diethylzinc on gallium-rich and arsenic-rich reconstructions of GaAs(100)

SURFACE SCIENCE

卷:401

Article

Lam, HT ; Venkateswaran, N ; Vohs, JM

关键词: chemisorption;    electron energy loss spectroscopy;    Gallium arsenide;    growth;    models of surface chemical reactions;    thermal desorption spectroscopy;    zinc selenide;   

DOI  :  10.1016/S0039-6028(97)00903-5

来源: Elsevier

【 摘 要 】

Temperature programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS) were used to investigate the reaction of diethylzinc (DEZ) on the Ga-rich (4 x 2) and As-rich (2 x 4 and c(4 x 4) reconstructions of GaAs(100). DEZ dissociatively adsorbed on all three surfaces to form ethyl groups and Zn atoms. The strength of Zn surface interaction was found to be a function of surface As/Ga ratio. Adsorbed Zn atoms desorbed at 560 K on the Ga-rich (4 x 2) reconstruction and 585 K on the As-rich (2 x 4) reconstruction. Fur the c(4 x 4) surface, the primary Zn desorption feature was also at 585 K: however. additional Zn dt sorption features appeared between 600 and 700 K. Ill contrast to the interaction of Zn with GaAs(100), only minor variations in the reaction pathways for surface ethyl groups were observed as the surface As/Ga ratio was varied. The primary reaction pathway for ethyl groups an ail three surfaces was beta-hydride elimination at 570 K to produce ethylene. The ethylene yield was found to increase with increasing surface Ga concentration. (C) 1998 Elsevier Science B.V. All rights reserved.

【 授权许可】

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